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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2N3906, (MMBT,PZT)3906 Datasheet
Standard Package 1
Manufacturer ON Semiconductor
Series -
Packaging Cut Tape (CT)
Part Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 200mA
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V
Power - Max 625mW
Frequency - Transition 250MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Base Part Number 2N3906
2PB710ARL,215
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Diodes Incorporated, Bipolar (BJT) Transistor PNP 400V 150mA 50MHz 500mW Surface Mount SOT-23-3,
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ON Semiconductor, Bipolar (BJT) Transistor PNP 300V 150mA 50MHz 150mW Surface Mount SC-59,
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Diodes Incorporated, Bipolar (BJT) Transistor PNP 500V 150mA 60MHz 2.8W Surface Mount PowerDI™ 5,
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Infineon Technologies, Bipolar (BJT) Transistor PNP 45V 100mA 250MHz 330mW Surface Mount SOT-23-3,
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Nexperia USA Inc., Bipolar (BJT) Transistor PNP 300V 100mA 50MHz 1.2W Surface Mount SC-73, Automotive, AEC-Q101
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ON Semiconductor, Bipolar (BJT) Transistor PNP 30V 1A 100MHz 310mW Surface Mount SOT-23-3 (TO-236),
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ON Semiconductor, Bipolar (BJT) Transistor PNP 100V 30A 2MHz 200W Through Hole TO-204 (TO-3),
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