| Image |
Part Number |
Description |
Package |
Standard Package |
 |
PMST5401,115
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor PNP 150V 300mA 300MHz 200mW Surface Mount SOT-323-3 |
SC-70, SOT-323 |
3000 |
 |
PMV30UN,215
NXP USA Inc. |
NXP USA Inc., N-Channel 20V 5.7A (Tc) 1.9W (Tc) Surface Mount TO-236AB (SOT23) |
TO-236-3, SC-59, SOT-23-3 |
1 |
 |
PN2222A,126
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
PN2907A,126
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
 |
PBSS4160K,115
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor NPN 60V 750mA 220MHz 425mW Surface Mount SMT3; MPAK |
TO-236-3, SC-59, SOT-23-3 |
3000 |
|
PBSS4350S,126
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor NPN 50V 3A 100MHz 830mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
PBSS5160K,115
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor PNP 60V 700mA 185MHz 425mW Surface Mount SMT3; MPAK |
TO-236-3, SC-59, SOT-23-3 |
3000 |
|
PBSS5350S,126
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor PNP 50V 3A 100MHz 830mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
PBSS8110AS,126
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor NPN 100V 1A 100MHz 830mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
PBSS8110S,126
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor NPN 100V 1A 100MHz 830mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
PBSS9110AS,126
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor PNP 100V 1A 100MHz 830mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
PBSS9110S,126
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor PNP 100V 1A 100MHz 830mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
 |
BC879,112
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor NPN - Darlington 80V 1A 200MHz 830mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) |
1000 |
|
BC327-25,112
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor PNP 45V 500mA 80MHz 625mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) |
1000 |
|
BC327-40,112
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor PNP 45V 500mA 80MHz 625mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) |
1000 |
|
BC546B,126
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor NPN 65V 100mA 100MHz 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
BC557C,112
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) |
1000 |
|
PN2369A,126
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor NPN 15V 200mA 500MHz 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
BC547B,112
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) |
1000 |
|
BC547C,112
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) |
1000 |
|
BC556B,112
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) |
1000 |
|
BC557B,112
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) |
1000 |
|
2N5401,116
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor PNP 150V 300mA 300MHz 630mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
2N5551,116
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor NPN 160V 300mA 300MHz 630mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
2PA1015GR,126
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
2PA1015Y,126
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
2PB709AQ,115
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor PNP 45V 100mA 60MHz 250mW Surface Mount SMT3; MPAK |
TO-236-3, SC-59, SOT-23-3 |
3000 |
|
2PB709AQW,115
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor PNP 45V 100mA 60MHz 200mW Surface Mount SMT3; MPAK |
TO-236-3, SC-59, SOT-23-3 |
3000 |
|
2PB709AR,115
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor PNP 45V 100mA 70MHz 250mW Surface Mount SMT3; MPAK |
TO-236-3, SC-59, SOT-23-3 |
15000 |
|
2PB709AS,115
NXP USA Inc. |
NXP USA Inc., Bipolar (BJT) Transistor PNP 45V 100mA 80MHz 250mW Surface Mount SMT3; MPAK |
TO-236-3, SC-59, SOT-23-3 |
15000 |
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