PBSS8110AS,126

Part NumberPBSS8110AS,126

ManufacturerNXP USA Inc.

DescriptionTRANS NPN 100V 1A TO92

DatasheetPBSS8110AS

Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 100V 1A 100MHz 830mW Through Hole TO-92-3

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PBSS8110AS,126 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Datasheet

PBSS8110AS

Standard Package

2000

Manufacturer

NXP USA Inc.

Series

Packaging

Tape & Box (TB)

Part Status

Obsolete

Transistor Type

NPN

Current - Collector (Ic) (Max)

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

200mV @ 100mA, 1A

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

150 @ 250mA, 10V

Power - Max

830mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

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