| Image |
Part Number |
Description |
Package |
Standard Package |
 |
PDTA124TS,126
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
PDTA124XS,126
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
PDTA143TS,126
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
PDTA143XS,126
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
PDTA143ZS,126
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
PDTA144TS,126
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
 |
PDTA144VK,115
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250mW Surface Mount SMT3; MPAK |
TO-236-3, SC-59, SOT-23-3 |
3000 |
|
PDTA144VS,126
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
PDTA144WS,126
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
PDTB113EK,115
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 250mW Surface Mount SMT3; MPAK |
TO-236-3, SC-59, SOT-23-3 |
3000 |
|
PDTB113ZK,115
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 250mW Surface Mount SMT3; MPAK |
TO-236-3, SC-59, SOT-23-3 |
3000 |
|
PDTB123EK,115
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 250mW Surface Mount SMT3; MPAK |
TO-236-3, SC-59, SOT-23-3 |
3000 |
|
PDTB123YK,115
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 250mW Surface Mount SMT3; MPAK |
TO-236-3, SC-59, SOT-23-3 |
3000 |
|
PDTC114YS,126
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
PDTC115ES,126
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 20mA 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
PDTC115TS,126
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
PDTC123ES,126
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
PDTC123JS,126
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
 |
PDTC123TE,115
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount SC-75 |
SC-75, SOT-416 |
3000 |
|
PDTC123YE,115
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount SC-75 |
SC-75, SOT-416 |
3000 |
|
PDTC123YK,115
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250mW Surface Mount SMT3; MPAK |
TO-236-3, SC-59, SOT-23-3 |
9000 |
|
PDTC123YS,126
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
PDTC124TS,126
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
PDTC124XS,126
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
PDTC143TS,126
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
PDTC143XS,126
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
PDTC143ZS,126
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
PDTC144TS,126
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 500mW Through Hole TO-92-3 |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
2000 |
|
PDTC144VE,115
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount SC-75 |
SC-75, SOT-416 |
3000 |
|
PDTC144VK,115
NXP USA Inc. |
NXP USA Inc., Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250mW Surface Mount SMT3; MPAK |
TO-236-3, SC-59, SOT-23-3 |
3000 |
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