PDTC114YS,126


PDTC114YS,126

Part NumberPDTC114YS,126

Manufacturer

Description

Datasheet

Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

PDTC114YS,126 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
Standard Package2000
ManufacturerNXP USA Inc.
Series-
PackagingTape & Box (TB)
Part StatusObsolete
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic100mV @ 250µA, 5mA
Current - Collector Cutoff (Max)1µA
Power - Max500mW
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device PackageTO-92-3
Base Part NumberPDTC114

PDTC114YS,126 - Tags

PDTC114YS,126 PDTC114YS,126 PDF PDTC114YS,126 datasheet PDTC114YS,126 specification PDTC114YS,126 image PDTC114YS,126 India Renesas Electronics India PDTC114YS,126 buy PDTC114YS,126 PDTC114YS,126 price PDTC114YS,126 distributor PDTC114YS,126 supplier PDTC114YS,126 wholesales