VWM200-01P

Part NumberVWM200-01P

ManufacturerIXYS

DescriptionMOSFET 6N-CH 100V 210A V2

DatasheetVWM200-01P

Package / CaseV2-PAK

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 6 N-Channel (3-Phase Bridge) 100V 210A Through Hole V2-PAK

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VWM200-01P - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

VWM200-01P

Standard Package

Manufacturer

IXYS

Series

Packaging

Bulk

Part Status

Obsolete

FET Type

6 N-Channel (3-Phase Bridge)

FET Feature

Standard

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

210A

Rds On (Max) @ Id, Vgs

5.2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 2mA

Gate Charge (Qg) (Max) @ Vgs

430nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

Power - Max

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

V2-PAK

Supplier Device Package

V2-PAK

All categories

VWM200-01P

Part NumberVWM200-01P

ManufacturerIXYS

DescriptionMOSFET 6N-CH 100V 210A V2

DatasheetVWM200-01P

Package / CaseV2-PAK

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 6 N-Channel (3-Phase Bridge) 100V 210A Through Hole V2-PAK

VWM200-01P - Product Attributes

VWM200-01P - Tags