VS-GT400TH60N

Part NumberVS-GT400TH60N

ManufacturerVishay Semiconductor Diodes Division

DescriptionIGBT 600V 530A 1600W DIAP

DatasheetVS-GT400TH60N

Package / CaseDouble INT-A-PAK (3 + 8)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Module Trench Half Bridge 600V 530A 1600W Chassis Mount Double INT-A-PAK

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VS-GT400TH60N - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Modules

Datasheet

VS-GT400TH60N

Standard Package

Manufacturer

Vishay Semiconductor Diodes Division

Series

Part Status

Active

IGBT Type

Trench

Configuration

Half Bridge

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

530A

Power - Max

1600W

Vce(on) (Max) @ Vge, Ic

2.05V @ 15V, 400A

Current - Collector Cutoff (Max)

5mA

Input Capacitance (Cies) @ Vce

30.8nF @ 30V

Input

Standard

NTC Thermistor

Operating Temperature

175°C (TJ)

Mounting Type

Chassis Mount

Package / Case

Double INT-A-PAK (3 + 8)

Supplier Device Package

Double INT-A-PAK

All categories

VS-GT400TH60N

Part NumberVS-GT400TH60N

ManufacturerVishay Semiconductor Diodes Division

DescriptionIGBT 600V 530A 1600W DIAP

DatasheetVS-GT400TH60N

Package / CaseDouble INT-A-PAK (3 + 8)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Module Trench Half Bridge 600V 530A 1600W Chassis Mount Double INT-A-PAK

VS-GT400TH60N - Product Attributes

VS-GT400TH60N - Tags