VS-GT200TP065N

Part NumberVS-GT200TP065N

ManufacturerVishay Semiconductor Diodes Division

DescriptionIGBT

DatasheetVS-GT200TP065N

Package / CaseINT-A-Pak

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Module Trench Half Bridge 650V 221A 600W Chassis Mount INT-A-PAK

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VS-GT200TP065N - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Modules

Datasheet

VS-GT200TP065N

Standard Package

Manufacturer

Vishay Semiconductor Diodes Division

Series

Part Status

Active

IGBT Type

Trench

Configuration

Half Bridge

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

221A

Power - Max

600W

Vce(on) (Max) @ Vge, Ic

2.12V @ 15V, 200A

Current - Collector Cutoff (Max)

60µA

Input

Standard

NTC Thermistor

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Chassis Mount

Package / Case

INT-A-Pak

Supplier Device Package

INT-A-PAK

All categories

VS-GT200TP065N

Part NumberVS-GT200TP065N

ManufacturerVishay Semiconductor Diodes Division

DescriptionIGBT

DatasheetVS-GT200TP065N

Package / CaseINT-A-Pak

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Module Trench Half Bridge 650V 221A 600W Chassis Mount INT-A-PAK

VS-GT200TP065N - Product Attributes

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