VS-GT100TP120N

Part NumberVS-GT100TP120N

ManufacturerVishay Semiconductor Diodes Division

DescriptionIGBT 1200V 180A 652W INT-A-PAK

DatasheetVS-GT100TP120N

Package / CaseINT-A-PAK (3 + 4)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Module Trench Half Bridge 1200V 180A 652W Chassis Mount INT-A-PAK

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VS-GT100TP120N - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Modules

Datasheet

VS-GT100TP120N

Standard Package

Manufacturer

Vishay Semiconductor Diodes Division

Series

Part Status

Obsolete

IGBT Type

Trench

Configuration

Half Bridge

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

180A

Power - Max

652W

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 100A

Current - Collector Cutoff (Max)

5mA

Input Capacitance (Cies) @ Vce

12.8nF @ 30V

Input

Standard

NTC Thermistor

Operating Temperature

175°C (TJ)

Mounting Type

Chassis Mount

Package / Case

INT-A-PAK (3 + 4)

Supplier Device Package

INT-A-PAK

All categories

VS-GT100TP120N

Part NumberVS-GT100TP120N

ManufacturerVishay Semiconductor Diodes Division

DescriptionIGBT 1200V 180A 652W INT-A-PAK

DatasheetVS-GT100TP120N

Package / CaseINT-A-PAK (3 + 4)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Module Trench Half Bridge 1200V 180A 652W Chassis Mount INT-A-PAK

VS-GT100TP120N - Product Attributes

VS-GT100TP120N - Tags