VS-GB100TP120N


VS-GB100TP120N

Part NumberVS-GB100TP120N

Manufacturer

Description

Package / CaseINT-A-Pak

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

VS-GB100TP120N - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Modules
Standard Package24
ManufacturerVishay Semiconductor Diodes Division
Series-
Part StatusLast Time Buy
IGBT Type-
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)200A
Power - Max650W
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 100A
Current - Collector Cutoff (Max)5mA
Input Capacitance (Cies) @ Vce7.43nF @ 25V
InputStandard
NTC ThermistorNo
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Package / CaseINT-A-Pak
Supplier Device PackageINT-A-PAK

VS-GB100TP120N - Tags

VS-GB100TP120N VS-GB100TP120N PDF VS-GB100TP120N datasheet VS-GB100TP120N specification VS-GB100TP120N image VS-GB100TP120N India Renesas Electronics India VS-GB100TP120N buy VS-GB100TP120N VS-GB100TP120N price VS-GB100TP120N distributor VS-GB100TP120N supplier VS-GB100TP120N wholesales