VS-GB100LP120N

Part NumberVS-GB100LP120N

ManufacturerVishay Semiconductor Diodes Division

DescriptionIGBT 1200V 200A 658W INT-A-PAK

DatasheetVS-GB100LP120N

Package / CaseINT-A-Pak

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Module Single 1200V 200A 658W Chassis Mount INT-A-PAK

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VS-GB100LP120N - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Modules

Datasheet

VS-GB100LP120N

Standard Package

Manufacturer

Vishay Semiconductor Diodes Division

Series

Part Status

Last Time Buy

IGBT Type

Configuration

Single

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

200A

Power - Max

658W

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 100A (Typ)

Current - Collector Cutoff (Max)

1mA

Input Capacitance (Cies) @ Vce

7.43nF @ 25V

Input

Standard

NTC Thermistor

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

INT-A-Pak

Supplier Device Package

INT-A-PAK

All categories

VS-GB100LP120N

Part NumberVS-GB100LP120N

ManufacturerVishay Semiconductor Diodes Division

DescriptionIGBT 1200V 200A 658W INT-A-PAK

DatasheetVS-GB100LP120N

Package / CaseINT-A-Pak

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Module Single 1200V 200A 658W Chassis Mount INT-A-PAK

VS-GB100LP120N - Product Attributes

VS-GB100LP120N - Tags