Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ VP2206N3-G

VP2206N3-G

VP2206N3-G

Part NumberVP2206N3-G

ManufacturerMicrochip Technology

DescriptionMOSFET P-CH 60V 640MA TO92-3

DatasheetVP2206

Package / CaseTO-226-3, TO-92-3 (TO-226AA)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 640mA (Tj) 740mW (Tc) Through Hole TO-92-3

To learn about the specification of VP2206N3-G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add VP2206N3-G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of VP2206N3-G.
We are offering VP2206N3-G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

VP2206N3-G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	VP2206
Standard Package	1000
Manufacturer	Microchip Technology
Series	-
Packaging	Bulk
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	640mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	900mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 10mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	450pF @ 25V
FET Feature	-
Power Dissipation (Max)	740mW (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA)

VP2206N3-G - Related Products

	SQJ407EP-T1_GE3	Vishay Siliconix, P-Channel 30V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	PMXB120EPEZ	Nexperia USA Inc., P-Channel 30V 2.4A (Ta) 400mW (Ta), 8.3W (Tc) Surface Mount DFN1010D-3,	View
	SUD50P04-08-GE3	Vishay Siliconix, P-Channel 40V 50A (Tc) 2.5W (Ta), 73.5W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	DMP2008UFG-13	Diodes Incorporated, P-Channel 20V 14A (Ta), 54A (Tc) 2.4W (Ta), 41W (Tc) Surface Mount PowerDI3333-8,	View
	PMV160UP,215	Nexperia USA Inc., P-Channel 20V 1.2A (Ta) 335mW (Ta), 2.17W (Tc) Surface Mount TO-236AB,	View
	FDC604P	ON Semiconductor, P-Channel 20V 5.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	DMP10H4D2S-7	Diodes Incorporated, P-Channel 100V 270mA (Ta) 380mW (Ta) Surface Mount SOT-23,	View
	ZXMP6A17KTC	Diodes Incorporated, P-Channel 60V 4.4A (Ta) 2.11W (Ta) Surface Mount TO-252-3,	View
	SFT1342-TL-W	ON Semiconductor, P-Channel 60V 12A (Ta) 1W (Ta), 15W (Tc) Surface Mount TP-FA,	View
	VP2106N3-G	Microchip Technology, P-Channel 60V 250mA (Tj) 1W (Tc) Through Hole TO-92-3,	View
	SI5441BDC-T1-E3	Vishay Siliconix, P-Channel 20V 4.4A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™, TrenchFET®	View
	FQPF22P10	ON Semiconductor, P-Channel 100V 13.2A (Tc) 45W (Tc) Through Hole TO-220F, QFET®	View

VP2206N3-G - Tags

VP2206N3-G VP2206N3-G PDF VP2206N3-G datasheet VP2206N3-G specification VP2206N3-G image VP2206N3-G India Renesas Electronics India VP2206N3-G buy VP2206N3-G VP2206N3-G price VP2206N3-G distributor VP2206N3-G supplier VP2206N3-G wholesales