VP2206N3-G-P003

Part NumberVP2206N3-G-P003

ManufacturerMicrochip Technology

DescriptionMOSFET P-CH 60V 640MA TO92-3

DatasheetVP2206

Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 640mA (Tj) 740mW (Tc) Through Hole TO-92-3

To learn about the specification of VP2206N3-G-P003, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add VP2206N3-G-P003 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of VP2206N3-G-P003.
We are offering VP2206N3-G-P003 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

VP2206N3-G-P003 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

VP2206

Standard Package

2000

Manufacturer

Microchip Technology

Series

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

640mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

900mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

3.5V @ 10mA

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

450pF @ 25V

FET Feature

Power Dissipation (Max)

740mW (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

All categories