UTV8100B


UTV8100B

Part NumberUTV8100B

Manufacturer

Description

Datasheet

Package / Case55RT

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

UTV8100B - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
Series-
PackagingBulk
Part StatusObsolete
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)60V
Frequency - Transition470MHz ~ 860MHz
Noise Figure (dB Typ @ f)-
Gain8.5dB ~ 9.5dB
Power - Max290W
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 1A, 5V
Current - Collector (Ic) (Max)15A
Operating Temperature200°C (TJ)
Mounting TypeChassis Mount
Package / Case55RT
Supplier Device Package55RT

UTV8100B - Tags

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