UNR421100A


UNR421100A

Part NumberUNR421100A

Manufacturer

Description

Datasheet

Package / Case3-SSIP

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

UNR421100A - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
Standard Package5000
ManufacturerPanasonic Electronic Components
Series-
PackagingTape & Box (TB)
Part StatusObsolete
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition150MHz
Power - Max300mW
Mounting TypeThrough Hole
Package / Case3-SSIP
Supplier Device PackageNS-B1

UNR421100A - Tags

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