UNR412200A


UNR412200A

Part NumberUNR412200A

Manufacturer

Description

Datasheet

Package / Case3-SSIP

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

UNR412200A - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
Standard Package5000
ManufacturerPanasonic Electronic Components
Series-
PackagingTape & Box (TB)
Part StatusObsolete
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 100mA
Current - Collector Cutoff (Max)1µA
Frequency - Transition200MHz
Power - Max300mW
Mounting TypeThrough Hole
Package / Case3-SSIP
Supplier Device PackageNS-A1

UNR412200A - Tags

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