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TTC004B,Q

TTC004B,Q

Part NumberTTC004B,Q

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS NPN 160V 1.5A TO126N

DatasheetTTC004B

Package / CaseTO-225AA, TO-126-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 160V 1.5A 100MHz 10W Through Hole TO-126N

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TTC004B,Q - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	TTC004B
Standard Package	250
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tube
Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	1.5A
Voltage - Collector Emitter Breakdown (Max)	160V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	140 @ 100mA, 5V
Power - Max	10W
Frequency - Transition	100MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-225AA, TO-126-3
Supplier Device Package	TO-126N

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