TTC0002(Q)

Part NumberTTC0002(Q)

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS NPN 160V 18A TO-3PL

DatasheetTTC0002

Package / CaseTO-3PL

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 160V 18A 30MHz 180W Through Hole TO-3P(L)

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TTC0002(Q) - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Datasheet

TTC0002

Standard Package

100

Manufacturer

Toshiba Semiconductor and Storage

Series

Packaging

Bulk

Part Status

Active

Transistor Type

NPN

Current - Collector (Ic) (Max)

18A

Voltage - Collector Emitter Breakdown (Max)

160V

Vce Saturation (Max) @ Ib, Ic

2V @ 900mA, 9A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 1A, 5V

Power - Max

180W

Frequency - Transition

30MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3PL

Supplier Device Package

TO-3P(L)

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