Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TSM900N06CW RPG

TSM900N06CW RPG

TSM900N06CW RPG

Part NumberTSM900N06CW RPG

ManufacturerTaiwan Semiconductor Corporation

DescriptionMOSFET N-CHANNEL 60V 11A SOT223

DatasheetTSM900N06

Package / CaseTO-261-4, TO-261AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 11A (Tc) 25W (Tc) Surface Mount SOT-223

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TSM900N06CW RPG - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TSM900N06
Standard Package	1
Manufacturer	Taiwan Semiconductor Corporation
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	90mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.3nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	500pF @ 15V
FET Feature	-
Power Dissipation (Max)	25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223
Package / Case	TO-261-4, TO-261AA

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