TSM80N1R2CI C0G


TSM80N1R2CI C0G

Part NumberTSM80N1R2CI C0G

Manufacturer

Description

Datasheet

Package / CaseTO-220-3 Full Pack, Isolated Tab

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TSM80N1R2CI C0G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1000
ManufacturerTaiwan Semiconductor Corporation
Series-
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19.4nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds685pF @ 100V
FET Feature-
Power Dissipation (Max)25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageITO-220AB
Package / CaseTO-220-3 Full Pack, Isolated Tab

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TSM80N1R2CI C0G - Tags

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