TSM6502CR RLG

Part NumberTSM6502CR RLG

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	TSM6502CR
Standard Package	1
Manufacturer	Taiwan Semiconductor Corporation
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N and P-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	24A (Tc), 18A (Tc)
Rds On (Max) @ Id, Vgs	34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10.3nC @ 4.5V, 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1159pF @ 30V, 930pF @ 30V
Power - Max	40W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Supplier Device Package	8-PDFN (5x6)

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IRF7379TRPBF	Infineon Technologies, Mosfet Array N and P-Channel 30V 5.8A, 4.3A 2.5W Surface Mount 8-SO, HEXFET®	View
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DMC62D0SVQ-7	Diodes Incorporated, Mosfet Array N and P-Channel Complementary 60V, 50V 571mA (Ta), 304mA (Ta) 510mW (Ta) Surface Mount SOT-563, Automotive, AEC-Q101	View
TC8220K6-G	Microchip Technology, Mosfet Array 2 N and 2 P-Channel 200V Surface Mount 12-DFN (4x4),	View
DMC4050SSDQ-13	Diodes Incorporated, Mosfet Array N and P-Channel Complementary 40V 5.3A 1.8W Surface Mount 8-SO, Automotive, AEC-Q101	View

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