TSM60N600CI C0G

Part NumberTSM60N600CI C0G

ManufacturerTaiwan Semiconductor Corporation

DescriptionMOSFET N-CHANNEL 600V 8A ITO220

DatasheetTSM60N600

Package / CaseTO-220-3 Full Pack, Isolated Tab

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 8A (Tc) 83W (Tc) Through Hole ITO-220AB

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TSM60N600CI C0G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TSM60N600

Standard Package

1000

Manufacturer

Taiwan Semiconductor Corporation

Series

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

743pF @ 100V

FET Feature

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ITO-220AB

Package / Case

TO-220-3 Full Pack, Isolated Tab

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