TSM60N1R4CH C5G

Part NumberTSM60N1R4CH C5G

ManufacturerTaiwan Semiconductor Corporation

DescriptionMOSFET N-CH 600V 3.3A TO251

DatasheetTSM60N1R4

Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 3.3A (Tc) 38W (Tc) Through Hole TO-251 (IPAK)

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TSM60N1R4CH C5G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TSM60N1R4

Standard Package

1875

Manufacturer

Taiwan Semiconductor Corporation

Series

Packaging

Tube

Part Status

Not For New Designs

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

3.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.7nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

370pF @ 100V

FET Feature

Power Dissipation (Max)

38W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251 (IPAK)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

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