TSM2N7000KCT B0G

Part NumberTSM2N7000KCT B0G

ManufacturerTaiwan Semiconductor Corporation

DescriptionMOSFET N-CHANNEL 60V 300MA TO92

DatasheetTSM2N7000K

Package / CaseTO-226-3, TO-92-3 (TO-226AA)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 300mA (Ta) 400mW (Ta) Through Hole TO-92

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TSM2N7000KCT B0G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TSM2N7000K

Standard Package

1000

Manufacturer

Taiwan Semiconductor Corporation

Series

Packaging

Bulk

Part Status

Not For New Designs

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

300mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

5Ohm @ 100mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.4nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7.32pF @ 25V

FET Feature

Power Dissipation (Max)

400mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

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