TSM1NB60SCT B0G

Part NumberTSM1NB60SCT B0G

ManufacturerTaiwan Semiconductor Corporation

DescriptionMOSFET N-CH 600V 500MA TO92

DatasheetTSM1NB60SCT

Package / CaseTO-226-3, TO-92-3 (TO-226AA)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 500mA (Tc) 2.5W (Tc) Through Hole TO-92

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TSM1NB60SCT B0G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TSM1NB60SCT

Standard Package

1000

Manufacturer

Taiwan Semiconductor Corporation

Series

Packaging

Bulk

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

500mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

10Ohm @ 250mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.1nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

138pF @ 25V

FET Feature

Power Dissipation (Max)

2.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

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