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TSM130NB06LCR


TSM130NB06LCR

Part NumberTSM130NB06LCR

Manufacturer

Description

Datasheet

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TSM130NB06LCR - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerTaiwan Semiconductor Corporation
Series-
PackagingCut Tape (CT)
Part StatusDiscontinued at Digi-Key
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs37nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2175pF @ 30V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 83W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PDFN (5x6)
Package / Case8-PowerTDFN

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