TSM110NB04LCR RLG

Part NumberTSM110NB04LCR RLG

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TSM110NB04LCR
Standard Package	1
Manufacturer	Taiwan Semiconductor Corporation
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	11mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1269pF @ 20V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta), 68W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PDFN (5x6)
Package / Case	8-PowerTDFN

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