TSM061NA03CV RGG

Part NumberTSM061NA03CV RGG

ManufacturerTaiwan Semiconductor Corporation

DescriptionMOSFET N-CH 30V 66A 8PDFN

DatasheetTSM061NA03CV

Package / Case8-PowerWDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 66A (Tc) 44.6W (Tc) Surface Mount 8-PDFN (3x3)

To learn about the specification of TSM061NA03CV RGG, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TSM061NA03CV RGG with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TSM061NA03CV RGG.
We are offering TSM061NA03CV RGG for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TSM061NA03CV RGG - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TSM061NA03CV

Standard Package

Manufacturer

Taiwan Semiconductor Corporation

Series

Packaging

Cut Tape (CT)

Part Status

Discontinued at Digi-Key

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

66A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.1mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1136pF @ 15V

FET Feature

Power Dissipation (Max)

44.6W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PDFN (3x3)

Package / Case

8-PowerWDFN

All categories