TRS8E65C,S1Q

Part NumberTRS8E65C,S1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionDIODE SCHOTTKY 650V 8A TO220-2L

DatasheetTRS8E65C

Package / CaseTO-220-2

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionDiode Silicon Carbide Schottky 650V 8A (DC) Through Hole TO-220-2L

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TRS8E65C,S1Q - Product Attributes

Categories

Discrete Semiconductor Products / Diodes - Rectifiers - Single

Datasheet

TRS8E65C

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

Packaging

Tube

Part Status

Last Time Buy

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

650V

Current - Average Rectified (Io)

8A (DC)

Voltage - Forward (Vf) (Max) @ If

1.7V @ 8A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

90µA @ 650V

Capacitance @ Vr, F

44pF @ 650V, 1MHz

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220-2L

Operating Temperature - Junction

175°C (Max)

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