TPS1101DR

Part NumberTPS1101DR

ManufacturerTexas Instruments

DescriptionMOSFET P-CH 15V 2.3A 8-SOIC

DatasheetTPS1101, TPS1101Y

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 15V 2.3A (Ta) 791mW (Ta) Surface Mount 8-SOIC

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TPS1101DR - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TPS1101, TPS1101Y

Standard Package

2500

Manufacturer

Texas Instruments

Series

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

15V

Current - Continuous Drain (Id) @ 25°C

2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.7V, 10V

Rds On (Max) @ Id, Vgs

90mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11.25nC @ 10V

Vgs (Max)

+2V, -15V

FET Feature

Power Dissipation (Max)

791mW (Ta)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

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