TPS1100DR


TPS1100DR

Part NumberTPS1100DR

Manufacturer

Description

Datasheet

Package / Case8-SOIC (0.154", 3.90mm Width)

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Lead TimeTo be Confirmed

Detailed Description

TPS1100DR - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package2500
ManufacturerTexas Instruments
Series-
PackagingTape & Reel (TR)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)15V
Current - Continuous Drain (Id) @ 25°C1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 10V
Rds On (Max) @ Id, Vgs180mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.45nC @ 10V
Vgs (Max)+2V, -15V
FET Feature-
Power Dissipation (Max)791mW (Ta)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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