Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TPN7R506NH,L1Q

TPN7R506NH,L1Q

TPN7R506NH,L1Q

Part NumberTPN7R506NH,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 60V 26A 8TSON

DatasheetTPN7R506NH

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 26A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)

To learn about the specification of TPN7R506NH,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TPN7R506NH,L1Q with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TPN7R506NH,L1Q.
We are offering TPN7R506NH,L1Q for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TPN7R506NH,L1Q - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPN7R506NH
Standard Package	5000
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6.5V, 10V
Rds On (Max) @ Id, Vgs	7.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 30V
FET Feature	-
Power Dissipation (Max)	700mW (Ta), 42W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN

TPN7R506NH,L1Q - Related Products

	FQB6N80TM	ON Semiconductor, N-Channel 800V 5.8A (Tc) 3.13W (Ta), 158W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View
	IXFB150N65X2	IXYS, N-Channel 650V 150A (Tc) 1560W (Tc) Through Hole PLUS264™, HiPerFET™	View
	SSM3K72KCT,L3F	Toshiba Semiconductor and Storage, N-Channel 60V 400mA (Ta) 500mW (Ta) Surface Mount CST3, U-MOSVII-H	View
	IPP023N10N5AKSA1	Infineon Technologies, N-Channel 100V 120A (Tc) 375W (Tc) Through Hole PG-TO220-3, OptiMOS™	View
	FDBL0200N100	ON Semiconductor, N-Channel 100V 300A (Tc) 429W (Tc) Surface Mount 8-HPSOF,	View
	BUK762R0-40C,118	Nexperia USA Inc., N-Channel 40V 100A (Tc) 333W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	STD7NK40ZT4	STMicroelectronics, N-Channel 400V 5.4A (Tc) 70W (Tc) Surface Mount DPAK, SuperMESH™	View
	IRFB3307ZPBF	Infineon Technologies, N-Channel 75V 120A (Tc) 230W (Tc) Through Hole TO-220AB, HEXFET®	View
	DMN6068LK3-13	Diodes Incorporated, N-Channel 60V 6A (Ta) 2.12W (Ta) Surface Mount TO-252-3,	View
	IPP65R095C7XKSA1	Infineon Technologies, N-Channel 650V 24A (Tc) 128W (Tc) Through Hole PG-TO220-3, CoolMOS™ C7	View
	STD11N60M2-EP	STMicroelectronics, N-Channel 600V 7.5A (Tc) 85W (Tc) Surface Mount DPAK, MDmesh™ M2-EP	View
	FDA33N25	ON Semiconductor, N-Channel 250V 33A (Tc) 245W (Tc) Through Hole TO-3PN, UniFET™	View

TPN7R506NH,L1Q - Tags

TPN7R506NH,L1Q TPN7R506NH,L1Q PDF TPN7R506NH,L1Q datasheet TPN7R506NH,L1Q specification TPN7R506NH,L1Q image TPN7R506NH,L1Q India Renesas Electronics India TPN7R506NH,L1Q buy TPN7R506NH,L1Q TPN7R506NH,L1Q price TPN7R506NH,L1Q distributor TPN7R506NH,L1Q supplier TPN7R506NH,L1Q wholesales