Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ TPN7R506NH,L1Q

TPN7R506NH,L1Q

TPN7R506NH,L1Q

Part NumberTPN7R506NH,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 60V 26A 8TSON

DatasheetTPN7R506NH

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 26A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)

To learn about the specification of TPN7R506NH,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TPN7R506NH,L1Q with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TPN7R506NH,L1Q.
We are offering TPN7R506NH,L1Q for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TPN7R506NH,L1Q - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPN7R506NH
Standard Package	5000
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6.5V, 10V
Rds On (Max) @ Id, Vgs	7.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 30V
FET Feature	-
Power Dissipation (Max)	700mW (Ta), 42W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN

TPN7R506NH,L1Q - Related Products

	FDD4N60NZ	ON Semiconductor, N-Channel 600V 3.4A (Tc) 114W (Tc) Surface Mount DPAK, UniFET-II™	View
	SPD04N50C3ATMA1	Infineon Technologies, N-Channel 500V 4.5A (Tc) 50W (Tc) Surface Mount PG-TO252-3-1, CoolMOS™	View
	IPW65R048CFDAFKSA1	Infineon Technologies, N-Channel 650V 63.3A (Tc) 500W (Tc) Through Hole PG-TO247-3, Automotive, AEC-Q101, CoolMOS™	View
	IXTA36N30P	IXYS, N-Channel 300V 36A (Tc) 300W (Tc) Surface Mount TO-263 (IXTA), PolarHT™	View
	ZVN4525GTA	Diodes Incorporated, N-Channel 250V 310mA (Ta) 2W (Ta) Surface Mount SOT-223,	View
	DMNH10H028SPSQ-13	Diodes Incorporated, N-Channel 100V 40A (Tc) 1.6W (Ta) Surface Mount PowerDI5060-8,	View
	TK20A60U(Q,M)	Toshiba Semiconductor and Storage, N-Channel 600V 20A (Ta) 45W (Tc) Through Hole TO-220SIS, DTMOSII	View
	BSC0901NSATMA1	Infineon Technologies, N-Channel 30V 28A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™	View
	IRFS31N20DTRLP	Infineon Technologies, N-Channel 200V 31A (Tc) 3.1W (Ta), 200W (Tc) Surface Mount D2PAK, HEXFET®	View
	TSM026NA03CR RLG	Taiwan Semiconductor Corporation, N-Channel 30V 168A (Tc) 125W (Tc) Surface Mount 8-PDFN (5x6),	View
	STD70N10F4	STMicroelectronics, N-Channel 100V 60A (Tc) 125W (Tc) Surface Mount DPAK, DeepGATE™, STripFET™	View
	IRLR2703TRPBF	Infineon Technologies, N-Channel 30V 23A (Tc) 45W (Tc) Surface Mount D-Pak, HEXFET®	View

TPN7R506NH,L1Q - Tags

TPN7R506NH,L1Q TPN7R506NH,L1Q PDF TPN7R506NH,L1Q datasheet TPN7R506NH,L1Q specification TPN7R506NH,L1Q image TPN7R506NH,L1Q India Renesas Electronics India TPN7R506NH,L1Q buy TPN7R506NH,L1Q TPN7R506NH,L1Q price TPN7R506NH,L1Q distributor TPN7R506NH,L1Q supplier TPN7R506NH,L1Q wholesales