TPN2R805PL,L1Q

Part NumberTPN2R805PL,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionX35 PB-F POWER MOSFET TRANSISTOR

DatasheetTPN2R805PL

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 45V 139A (Ta), 80A (Tc) 2.67W (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)

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TPN2R805PL,L1Q - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TPN2R805PL

Standard Package

5000

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIX-H

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

45V

Current - Continuous Drain (Id) @ 25°C

139A (Ta), 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.8mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

2.4V @ 300µA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3.2nF @ 22.5V

FET Feature

Power Dissipation (Max)

2.67W (Ta), 104W (Tc)

Operating Temperature

175°C

Mounting Type

Surface Mount

Supplier Device Package

8-TSON Advance (3.3x3.3)

Package / Case

8-PowerVDFN

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