TPN2R503NC,L1Q

Part NumberTPN2R503NC,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N CH 30V 40A 8TSON-ADV

DatasheetTPN2R503NC

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 40A (Ta) 700mW (Ta), 35W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)

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TPN2R503NC,L1Q - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TPN2R503NC

Standard Package

5000

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVIII

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

40A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.3V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2230pF @ 15V

FET Feature

Power Dissipation (Max)

700mW (Ta), 35W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-TSON Advance (3.3x3.3)

Package / Case

8-PowerVDFN

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