TPN2010FNH,L1Q

Part NumberTPN2010FNH,L1Q

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TPN2010FNH
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25°C	5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	198mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id	4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	600pF @ 100V
FET Feature	-
Power Dissipation (Max)	700mW (Ta), 39W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN

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