TPN1110ENH,L1Q

Part NumberTPN1110ENH,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 200V 7.2A 8TSON

DatasheetTPN1110ENH

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 7.2A (Ta) 700mW (Ta), 39W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)

To learn about the specification of TPN1110ENH,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TPN1110ENH,L1Q with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TPN1110ENH,L1Q.
We are offering TPN1110ENH,L1Q for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TPN1110ENH,L1Q - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TPN1110ENH

Standard Package

5000

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVIII-H

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

7.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

114mOhm @ 3.6A, 10V

Vgs(th) (Max) @ Id

4V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

600pF @ 100V

FET Feature

Power Dissipation (Max)

700mW (Ta), 39W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-TSON Advance (3.3x3.3)

Package / Case

8-PowerVDFN

All categories