TPH6R30ANL,L1Q

Part NumberTPH6R30ANL,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionX35 PB-F POWER MOSFET TRANSISTOR

DatasheetTPH6R30ANL

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 66A (Ta), 45A (Tc) 2.5W (Ta), 54W (Tc) Surface Mount 8-SOP Advance (5x5)

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TPH6R30ANL,L1Q - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TPH6R30ANL

Standard Package

5000

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVIII-H

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

66A (Ta), 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.3mOhm @ 22.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4300pF @ 50V

FET Feature

Power Dissipation (Max)

2.5W (Ta), 54W (Tc)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

8-SOP Advance (5x5)

Package / Case

8-PowerVDFN

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