TPH4R606NH,L1Q

Part NumberTPH4R606NH,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N CH 60V 32A 8-SOP ADV

DatasheetTPH4R606NH

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 32A (Ta) 1.6W (Ta), 63W (Tc) Surface Mount 8-SOP Advance (5x5)

To learn about the specification of TPH4R606NH,L1Q, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add TPH4R606NH,L1Q with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of TPH4R606NH,L1Q.
We are offering TPH4R606NH,L1Q for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

TPH4R606NH,L1Q - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TPH4R606NH

Standard Package

5000

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVIII-H

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

32A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6.5V, 10V

Rds On (Max) @ Id, Vgs

4.6mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

49nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3965pF @ 30V

FET Feature

Power Dissipation (Max)

1.6W (Ta), 63W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP Advance (5x5)

Package / Case

8-PowerVDFN

All categories