TPH3208PD

Part NumberTPH3208PD

ManufacturerTransphorm

DescriptionGANFET N-CH 650V 20A TO220

DatasheetTPH3208PS

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 20A (Tc) 96W (Tc) Through Hole TO-220AB

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TPH3208PD - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TPH3208PS

Standard Package

Manufacturer

Transphorm

Series

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 13A, 8V

Vgs(th) (Max) @ Id

2.6V @ 300µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 8V

Vgs (Max)

±18V

Input Capacitance (Ciss) (Max) @ Vds

760pF @ 400V

FET Feature

Power Dissipation (Max)

96W (Tc)

Operating Temperature

-55°C ~ 150°C

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

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