TPH1110ENH,L1Q

Part NumberTPH1110ENH,L1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 200V 7.2A 8SOP

DatasheetTPH1110ENH

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 7.2A (Ta) 1.6W (Ta), 42W (Tc) Surface Mount 8-SOP Advance (5x5)

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TPH1110ENH,L1Q - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TPH1110ENH

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVIII-H

Packaging

Cut Tape (CT)

Part Status

Discontinued at Digi-Key

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

7.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

114mOhm @ 3.6A, 10V

Vgs(th) (Max) @ Id

4V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

600pF @ 100V

FET Feature

Power Dissipation (Max)

1.6W (Ta), 42W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP Advance (5x5)

Package / Case

8-PowerVDFN

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