TPD3215M

Part NumberTPD3215M

ManufacturerTransphorm

DescriptionGANFET 2N-CH 600V 70A MODULE

DatasheetTPD3215M

Package / CaseModule

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Half Bridge) 600V 70A (Tc) 470W Through Hole Module

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TPD3215M - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

TPD3215M

Standard Package

Manufacturer

Transphorm

Series

Packaging

Bulk

Part Status

Obsolete

FET Type

2 N-Channel (Half Bridge)

FET Feature

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

70A (Tc)

Rds On (Max) @ Id, Vgs

34mOhm @ 30A, 8V

Vgs(th) (Max) @ Id

Gate Charge (Qg) (Max) @ Vgs

28nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds

2260pF @ 100V

Power - Max

470W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

Module

Supplier Device Package

Module

All categories

TPD3215M

Part NumberTPD3215M

ManufacturerTransphorm

DescriptionGANFET 2N-CH 600V 70A MODULE

DatasheetTPD3215M

Package / CaseModule

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Half Bridge) 600V 70A (Tc) 470W Through Hole Module

TPD3215M - Product Attributes

TPD3215M - Tags