TPCC8008(TE12L,QM)


TPCC8008(TE12L,QM)

Part NumberTPCC8008(TE12L,QM)

Manufacturer

Description

Datasheet

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TPCC8008(TE12L,QM) - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSIV
PackagingCut Tape (CT)
Part StatusDiscontinued at Digi-Key
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.8mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1A
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 10V
FET Feature-
Power Dissipation (Max)700mW (Ta), 30W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSON Advance (3.3x3.3)
Package / Case8-PowerVDFN

TPCC8008(TE12L,QM) - Tags

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