TPC8115(TE12L,Q,M)


TPC8115(TE12L,Q,M)

Part NumberTPC8115(TE12L,Q,M)

Manufacturer

Description

Datasheet

Package / Case8-SOIC (0.173", 4.40mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TPC8115(TE12L,Q,M) - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package3000
ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSIV
PackagingTape & Reel (TR)
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs10mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs115nC @ 5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds9130pF @ 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP (5.5x6.0)
Package / Case8-SOIC (0.173", 4.40mm Width)

TPC8115(TE12L,Q,M) - Tags

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