TPC8110(TE12L,Q,M)


TPC8110(TE12L,Q,M)

Part NumberTPC8110(TE12L,Q,M)

Manufacturer

Description

Datasheet

Package / Case8-SOIC (0.173", 4.40mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TPC8110(TE12L,Q,M) - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package3000
ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSIII
PackagingTape & Reel (TR)
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs25mOhm @ 4A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs48nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2180pF @ 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP (5.5x6.0)
Package / Case8-SOIC (0.173", 4.40mm Width)

TPC8110(TE12L,Q,M) - Tags

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