TPC6012(TE85L,F,M)

Part NumberTPC6012(TE85L,F,M)

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 20V 6A VS6

DatasheetTPC6012

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 6A (Ta) 700mW (Ta) Surface Mount VS-6 (2.9x2.8)

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TPC6012(TE85L,F,M) - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TPC6012

Standard Package

3000

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIV

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

20mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

9nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

630pF @ 10V

FET Feature

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

VS-6 (2.9x2.8)

Package / Case

SOT-23-6 Thin, TSOT-23-6

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