TPAR3J S1G


TPAR3J S1G

Part NumberTPAR3J S1G

Manufacturer

Description

Datasheet

Package / CaseTO-277, 3-PowerDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

TPAR3J S1G - Product Attributes

Categories Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet
Standard Package1
ManufacturerTaiwan Semiconductor Corporation
Series-
PackagingCut Tape (CT)
Part StatusActive
Diode TypeAvalanche
Voltage - DC Reverse (Vr) (Max)600V
Current - Average Rectified (Io)3A
Voltage - Forward (Vf) (Max) @ If1.55V @ 3A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)120ns
Current - Reverse Leakage @ Vr10µA @ 600V
Capacitance @ Vr, F58pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseTO-277, 3-PowerDFN
Supplier Device PackageTO-277A (SMPC)
Operating Temperature - Junction-55°C ~ 175°C

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