Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	TMBT3906
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	PNP
Current - Collector (Ic) (Max)	150mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	400mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 1V
Power - Max	320mW
Frequency - Transition	250MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23

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TMBT3906,LM

Part NumberTMBT3906,LM