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TK9J90E,S1E

TK9J90E,S1E

Part NumberTK9J90E,S1E

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 900V TO-3PN

DatasheetTK9J90E

Package / CaseTO-3P-3, SC-65-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 900V 9A (Ta) 250W (Tc) Through Hole TO-3P(N)

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TK9J90E,S1E - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TK9J90E
Standard Package	25
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.3Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id	4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs	46nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 25V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3P(N)
Package / Case	TO-3P-3, SC-65-3

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