TK9J90E,S1E
TK9J90E,S1E
Part Number TK9J90E,S1E Description MOSFET N-CH 900V TO-3PN Package / Case TO-3P-3, SC-65-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 900V 9A (Ta) 250W (Tc) Through Hole TO-3P(N)
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TK9J90E,S1E - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK9J90E Standard Package 25 Manufacturer Toshiba Semiconductor and Storage Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 9A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.3Ohm @ 4.5A, 10V Vgs(th) (Max) @ Id 4V @ 900µA Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 25V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P(N) Package / Case TO-3P-3, SC-65-3
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