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TK8Q65W,S1Q

TK8Q65W,S1Q

Part NumberTK8Q65W,S1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 650V 7.8A IPAK

DatasheetTK8Q65W

Package / CaseTO-251-3 Stub Leads, IPak

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 7.8A (Ta) 80W (Tc) Through Hole I-PAK

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TK8Q65W,S1Q - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TK8Q65W
Standard Package	75
Manufacturer	Toshiba Semiconductor and Storage
Series	DTMOSIV
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	7.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	670mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id	3.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	570pF @ 300V
FET Feature	-
Power Dissipation (Max)	80W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package / Case	TO-251-3 Stub Leads, IPak

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