TK8Q65W,S1Q
TK8Q65W,S1Q
Part Number TK8Q65W,S1Q
Description MOSFET N-CH 650V 7.8A IPAK
Package / Case TO-251-3 Stub Leads, IPak
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 650V 7.8A (Ta) 80W (Tc) Through Hole I-PAK
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TK8Q65W,S1Q - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK8Q65W
Standard Package 75
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 7.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 670mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id 3.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 300V
FET Feature -
Power Dissipation (Max) 80W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Stub Leads, IPak
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