TK6Q65W,S1Q

Part NumberTK6Q65W,S1Q

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 650V 5.8A IPAK-OS

DatasheetTK6Q65W

Package / CaseTO-251-3 Stub Leads, IPak

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 5.8A (Ta) 60W (Tc) Through Hole I-PAK

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TK6Q65W,S1Q - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

TK6Q65W

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

5.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.05Ohm @ 2.9A, 10V

Vgs(th) (Max) @ Id

3.5V @ 180µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

390pF @ 300V

FET Feature

Power Dissipation (Max)

60W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Stub Leads, IPak

All categories